నైరూప్య

Improved Efficiency by the Effect of Strain on the Structure of a Solar Cell Based on GaInP/ GaAs

A. Aissat, R. Bestam , J.P. Vilcot

This work is aimed at the study of GaInP-based photovoltaic cell. The effects of In content, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the GaInP structure were investigated. We noticed that for higher In concentrations, the band gap energy decreases significantly. The structure possesses two different regions that are dopant concentration-dependent (x <0.48 and x0.48). In the extensive strain region of x<0.48, we found that the efficiency reaches 17.93% in a lattice-matched (δ=5nm) case. For a concentration x0.48, we have a compressive strain ɛ0 which leads to a higher efficiency. For x=0.9, δ=5nmand a strain of 3.3%, we achieved an efficiency of 26.6%. The results show that light conversion efficiency has considerably boosted by varying insulating layer thickness and strain values.